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FDS9945
February 2001
FDS9945
60V N-Channel PowerTrench(R) MOSFET
General Description
These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
* 3.5 A, 60 V. RDS(ON) = 0.100 @ V GS = 10 V RDS(ON) = 0.200 @ V GS = 4.5V
* Optimized for use in switching DC/DC converters with PWM controllers * Very fast switching * Low gate charge.
D2 D
D2 D
DD1 D1 D
5 6 7
Q1
4 3 2
Q2
SO-8
Pin 1 SO-8
G1 S1 G G2 S S2 S
8
1
S
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
60 20
(Note 1a)
Units
V V A W
3.5 10 2 1.6 1.0 -55 to +175
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ , TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJA RJ C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
78 (steady state), 50 (10 sec) 135 40
C/W C/W C/W
Package Marking and Ordering Information
Device Marking FDS9945 Device FDS9945 Reel Size 13'' Tape width 12mm Quantity 2500 units
(c)2001 Fairchild Semiconductor Corporation
FDS9945 Rev B(W)
FDS9945
Electrical Characteristics
Symbol
BV DSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
V GS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C V DS = 48 V, V GS = 20 V, V GS = -20 V V GS = 0 V V DS = 0 V V DS = 0 V
Min
60
Typ
Max Units
V
Off Characteristics
62.5 1 100 -100 mV/C A nA nA
On Characteristics
V GS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
V DS = V GS , ID = 250 A ID = 250 A, Referenced to 25C V GS = 10 V, ID = 3.5 A V GS = 4.5V, ID = 2.5 A V GS = 10 V, ID =3.5A, TJ =125C V GS = 10 V, V DS = 5V, = V DS =30 V ID = 3.5 A
1
2.5 -6 74 103 126
3
V mV/C
100 200 170
m
ID(on) gFS
10 8.6
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
V DS = 30 V, f = 1.0 MHz
V GS = 0 V,
420 48 20
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
V DD = 30 V, V GS = 10 V,
ID = 1 A, RGEN = 6
7 4.3 19 3
14 8.6 34 6 13
ns ns ns ns nC nC nC
V DS = 30 V, V GS = 5 V
ID = 3.5 A,
8 4 2.5
Drain-Source Diode Characteristics and Maximum Ratings
IS V SD
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = 2.1 A Voltage
2.1
(Note 2)
A V
0.8
1.2
a) 78/W when mounted on a 0.5in2 pad of 2 oz copper
b) 125/W when mounted on a 0.02 in2 pad of 2 oz copper
c) 135/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS9945 Rev B(W)
FDS9945
Typical Characteristics
20
2.2 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE
V GS = 10V 6.0V 5.0V
2 VGS = 4.0V 1.8 1.6 4.5V 1.4 1.2 1 0.8 5.0V 6.0V 10V
I D, DRAIN CURRENT (A)
15
4.5V 10
4.0V 5
0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V)
0
3
6
9
12
15
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.25 RDS(ON) ON-RESISTANCE (OHM) ,
2 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100
o
ID = 3.5A VGS = 10V
ID = 1.75A 0.2 TA = 125 C 0.15
o
0.1 TA = 25 C 0.05 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
o
125
150
TJ , JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation withTemperature.
10 25 C 125 C
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 IS , REVERSE DRAIN CURRENT (A)
VD S = 5V I D, DRAIN CURRENT (A) 8
T A = -55 C
o
VGS = 0V
o
1 TA = 125 C 0.1 25 C 0.01 -55 C 0.001
o o o
6
4
2
0 2 2.5 3 3.5 4 4.5 5 VGS , GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS9945 Rev B(W)
FDS9945
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 3.5A 8 CAPACITANCE (pF) 40V 6 VD S = 20V 30V
600 500 CISS 400 300 200 COSS 100 C RSS 0 0 4 8 Q g, GATE CHARGE (nC) 12 16 0 5 10 15 20 25 30 VDS , DRAIN TO SOURCE VOLTAGE (V) f = 1MHz VGS = 0 V
4
2
0
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
100s ID, DRAIN CURRENT (A) 10 R DS(ON) LIMIT 1ms 10ms 1 VGS = 10V SINGLE PULSE o R JA = 135 C/W TA = 25 C 0.01 0.1
o
40
SINGLE PULSE R JA = 135C/W T A = 25C
30
100ms 1s DC 10s
20
0.1
10
1
10
100
0 0.001
0.01
0.1
1
10
100
VDS , DRAIN-SOURCE VOLTAGE (V)
t1 , TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05
RJA(t) = r(t) + R JA RJA = 135 C/W
P(pk)
0.02 0.01
t1 t2
0.01
SINGLE PULSE
TJ - TA = P * R J A(t) Duty Cycle, D = t1 / t 2
0.001 0.0001
0.001
0.01
0.1 t 1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS9945 Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM
PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G

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